BLF878

BLF878
 
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SKU
BLF878
Weight
0.20 lbs
Our price:
$210.00
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DATASHEET  

 

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range   470   860 MHz
PL(1dB) nominal output power at 1 dB gain compression     300   W
Test signal: CW
PL(PEP) output power     300   W
Gp power gain VDS = 42 V; f1 = 860 MHz; f2 = 860.1 MHz; PL(PEP) = 300 W 18 21   dB
ηD drain efficiency VDS = 42 V; f1 = 860 MHz; IDq = 1400 mA; f2 = 860.1 MHz; PL(PEP) = 300 W 42 46   %
IMD3 third-order intermodulation distortion VDS = 42 V; IDq = 1400 mA; PL(PEP) = 300 W   -35 -31 dBc

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features and benefits

  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • High efficiency
  • Good thermal stability
  • Easy power control
  • Integrated ESD protection
  • Internal input and output matching
  • Advanced flange material for optimum thermal behavior and reliability
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Communication transmitter applications in the UHF band
  • Industrial applications in the UHF band

 

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