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BLF888A

BLF888A
 
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SKU
BLF888A
Weight
0.20 lbs
Our price:
$219.00
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DATASHEET  

 

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range   470   860 MHz
PL(1dB) nominal output power at 1 dB gain compression     600   W
Test signal: CW
PL(AV) average output power f1 = 860 MHz; f2 = 860.1 MHz 250     W
Gp power gain VDS = 50 V; f1 = 860 MHz; f2 = 860.1 MHz 20 21   dB
ηD drain efficiency VDS = 50 V; IDq = 1.3 A; f1 = 860 MHz; f2 = 860.1 MHz 42 46   %
IMD3 third-order intermodulation distortion VDS = 50 V; IDq = 1.3 A; f1 = 860 MHz; f2 = 860.1 MHz   -32 -28 dBc
IDq quiescent drain current VDS = 50 V [0]   1.3   A

A 600W LDMOS RF power transistor for DVB-T applications optimised to give most rugged performance with no compromise in broadband efficiency and gain.

Features and benefits

  • Designed for broadband operation (470 MHz to 860 MHz)
  • Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
  • Extremely high power (P1dB 600W)
  • Internal input matching for high gain and optimum broadband operation
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

Applications

  • Communication transmitter applications in the UHF band
  • Industrial applications in the UHF band

 

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