Home :: RF Transistors :: HF to 1000MHz :: NXP BLF647

NXP BLF647

NXP BLF647
 
(0 reviews)  

SKU
BLF647
Weight
0.10 lbs
Our price:
$195.00
Click here to be notified of price drops of this item
 
Qty
Click here to be notified when this item is nearly out of stock

DATASHEET  

 

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range   1   800 MHz
PL(1dB) nominal output power at 1 dB gain compression     150   W
Test signal: CW
PL output power VDS = 32 V; f = 800 MHz   150   W
Gp power gain f = 800 MHz; VDS = 32 V; PL = 150 W   12.5   dB
ηD drain efficiency VDS = 32 V; f = 800 MHz; IDq = 1000 mA; PL = 150 W   60   %

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (HF to 800 MHz)
  • Internal input damping for excellent stability over the whole frequency range

Applications

  • Communication transmitter applications in the HF to 800 MHz frequency range

 

SD2942
$149.00
BLF245 28V 30W Transistor
$49.00
BLF3G21-6
$45.00
NXP CGD1042H
$39.00
12 inch Bonded Heat Sink
$110.00
MRF136 28V 15 watt module
$115.00
BLF188XR 88-108MHz 1000W Planar FM Pallet
$599.00
Type N Panel Mount Female Connector
$8.95
3 Way VHF Power Divider 11.6KW
$795.00
There have been no reviews