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Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range   1   800 MHz
PL(1dB) nominal output power at 1 dB gain compression     150   W
Test signal: CW
PL output power VDS = 32 V; f = 800 MHz   150   W
Gp power gain f = 800 MHz; VDS = 32 V; PL = 150 W   12.5   dB
ηD drain efficiency VDS = 32 V; f = 800 MHz; IDq = 1000 mA; PL = 150 W   60   %

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (HF to 800 MHz)
  • Internal input damping for excellent stability over the whole frequency range


  • Communication transmitter applications in the HF to 800 MHz frequency range


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