30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1800 | 2200 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 30 | W | |||
| Test signal: CW | ||||||
| Gp | power gain | VDS = 26 V; PL(PEP) = 30 W | 12.5 | 13.5 | dB | |
| ηD | drain efficiency | VDS = 26 V; f = 2000 MHz; IDq = 450 mA; PL(PEP) = 30 W | 32 | 35 | % | |
| IMD3 | third-order intermodulation distortion | VDS = 26 V; IDq = 450 mA; PL(PEP) ≤ 10 W | -50 | dBc | ||
| IMD3 | third-order intermodulation distortion | VDS = 26 V; IDq = 450 mA; PL(PEP) = 30 W | -26 | -23 | dBc | |
| PL(PEP) | peak envelope power | 30 | W | |||
| RLin | input return loss | VDS = 26 V; IDq = 450 mA; PL(PEP) = 30 W | -16 | -11 | dB | |
Features and benefits
- Excellent back-off linearity
- Easy power control
- Excellent ruggedness
- High power gain
- Excellent thermal stability
- Designed for broadband operation (HF to 2200 MHz)
- No internal matching for broadband operation
- ESD protection
Applications
- RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations
- Multicarrier applications in the HF to 2200 MHz frequency range
- Broadcast
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