BLF245 28V 30W Transistor

DATASHEET  

 Manufacturer:  NXP 
Configuration:  Single
Transistor Polarity:  N-Channel
Frequency:  175 MHz  
Gain:  15.5 dB 
Output Power:  30 W 
Drain-Source Breakdown Voltage:  65 V 
Continuous Drain Current:  6 A 
Gate-Source Breakdown Voltage:  +/- 20 V 
Maximum Operating Temperature:  + 150 C 
Package / Case:  SOT-123A 
Minimum Operating Temperature:  - 65 C  
Power Dissipation:  68 W 
Product Type:  RF MOSFET Power 
Resistance Drain-Source RDS (on):  0.75 Ohms 
Factory Pack Quantity:  20 
Part # Aliases:  BLF245