A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.
Discounts are availble for orders of 10+ pieces.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 128 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 1000 | W | |||
| Test signal: Pulsed RF | ||||||
| PL | output power | 1200 | W | |||
| Gp | power gain | VDS = 50 V; PL = 1200 W | 27 | 28.5 | 31 | dB |
| ηD | drain efficiency | PL = 1200 W; VDS = 50 V; f = 108 MHz; IDq = 40 mA | 71 | 75 | % | |
| RLin | input return loss | VDS = 50 V; IDq = 40 mA; PL = 1200 W | -16 | -12 | dB | |
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (10 MHz to 108 MHz)
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- Industrial, scientific and medical applications
- FM transmitter applications
