A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 470 | 860 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 300 | W | |||
| Test signal: CW | ||||||
| PL(PEP) | output power | 300 | W | |||
| Gp | power gain | VDS = 42 V; f1 = 860 MHz; f2 = 860.1 MHz; PL(PEP) = 300 W | 18 | 21 | dB | |
| ηD | drain efficiency | VDS = 42 V; f1 = 860 MHz; IDq = 1400 mA; f2 = 860.1 MHz; PL(PEP) = 300 W | 42 | 46 | % | |
| IMD3 | third-order intermodulation distortion | VDS = 42 V; IDq = 1400 mA; PL(PEP) = 300 W | -35 | -31 | dBc | |
Features and benefits
- Excellent ruggedness
- High power gain
- Excellent reliability
- High efficiency
- Good thermal stability
- Easy power control
- Integrated ESD protection
- Internal input and output matching
- Advanced flange material for optimum thermal behavior and reliability
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- Communication transmitter applications in the UHF band
- Industrial applications in the UHF band
