Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Discontinued. We have sold all of our inventory. USE SD2942 as replacement.
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 50 | 225 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 300 | W | |||
Test signal: CW | ||||||
PL | output power | [0] | 250 | W | ||
Gp | power gain | VDS = 50 V; PL = 250 W [0] | 14 | 16 | dB | |
ηD | drain efficiency | VDS = 50 V; f = 225 MHz; IDq = 500 mA; PL = 250 W [0] | 50 | 55 | % |
Features and benefits
- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability
Applications
- Broadcast transmitters in the VHF frequency range.