A 600W LDMOS RF power transistor for DVB-T applications optimised to give most rugged performance with no compromise in broadband efficiency and gain.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 470 | 860 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 600 | W | |||
| Test signal: CW | ||||||
| PL(AV) | average output power | f1 = 860 MHz; f2 = 860.1 MHz | 250 | W | ||
| Gp | power gain | VDS = 50 V; f1 = 860 MHz; f2 = 860.1 MHz | 20 | 21 | dB | |
| ηD | drain efficiency | VDS = 50 V; IDq = 1.3 A; f1 = 860 MHz; f2 = 860.1 MHz | 42 | 46 | % | |
| IMD3 | third-order intermodulation distortion | VDS = 50 V; IDq = 1.3 A; f1 = 860 MHz; f2 = 860.1 MHz | -32 | -28 | dBc | |
| IDq | quiescent drain current | VDS = 50 V [0] | 1.3 | A | ||
Features and benefits
- Designed for broadband operation (470 MHz to 860 MHz)
- Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
- Extremely high power (P1dB 600W)
- Internal input matching for high gain and optimum broadband operation
- Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Applications
- Communication transmitter applications in the UHF band
- Industrial applications in the UHF band
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