- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (10 MHz to 500 MHz)
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Due to supply issues re-sale of this part is reserved to support customers who use our amplifiers. No brokers please.
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 10 | 500 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 20 | W | |||
Test signal: CW | ||||||
PL | output power | 20 | W | |||
Gp | power gain | VDS = 50 V; IDq = 50 mA; PL = 20 W | 25.5 | 27.5 | 29.5 | dB |
ηD | drain efficiency | VDS = 50 V; f = 225 MHz; IDq = 50 mA; PL = 20 W | 67 | 70 | % | |
IRL | input return loss | VDS = 50 V; IDq = 50 mA; PL = 20 W | -13 | -10 | dB |
A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band.
Features and benefits
Applications
- Broadcast transmitter applications in the HF and VHF band
- Industrial, scientific and medical applications