Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 470 | 860 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 150 | W | |||
| Test signal: CW | ||||||
| PL | output power | 150 | W | |||
| Gp | power gain | VDS = 32 V; PL = 150 W | 13.5 | 14 | dB | |
| ηD | drain efficiency | VDS = 32 V; f = 860 Hz; IDq = 1000 mA; PL = 150 W | 50 | 60 | % | |
Features and benefits
- High power gain
- Easy power control
- Excellent ruggedness
- Designed to withstand abrupt load mismatch errors
- Source on underside eliminates DC isolators; reducing common mode inductance
- Designed for broadband operation (UHF band)
- Internal input and output matching
Applications
- Communication transmitter applications in the UHF frequency range
- Broadcast Concepts Inc
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