- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability
This part is an aftermarket replacement manufactured by P1dB
Features and benefits Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with ceramic cap. The mounting flange provides the common source connection for the transistors.
Applications
- Broadcast transmitters in the VHF frequency range.