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BLF178P

BLF178P
 
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SKU
BLF178P
Weight
0.20 lbs
Our price:
$219.00
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DATASHEET  

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range   10   128 MHz
PL(1dB) nominal output power at 1 dB gain compression     1000   W
Test signal: Pulsed RF
PL output power     1200   W
Gp power gain VDS = 50 V; PL = 1200 W 27 28.5 31 dB
ηD drain efficiency PL = 1200 W; VDS = 50 V; f = 108 MHz; IDq = 40 mA 71 75   %
RLin input return loss VDS = 50 V; IDq = 40 mA; PL = 1200 W   -16 -12 dB

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 108 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Industrial, scientific and medical applications
  • FM transmitter applications

 

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