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BLF3G21-6

BLF3G21-6
 
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SKU
BLF3G21-6
Weight
0.10 lbs
Our price:
$60.00
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DATASHEET  

 

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range   1800   2200 MHz
PL(1dB) nominal output power at 1 dB gain compression     6   W
Test signal: CW
Gp power gain VDS = 26 V; PL(PEP) = 6 W 14 15.5   dB
ηD drain efficiency VDS = 26 V; f = 2000 MHz; IDq = 90 mA; PL(PEP) = 6 W 35 39   %
IMD3 third-order intermodulation distortion VDS = 26 V; IDq = 90 mA; PL(PEP) ≤ 2 W   -50   dBc
IMD3 third-order intermodulation distortion IDq = 90 mA; PL(PEP) = 6 W; VDS = 26 V   -32 -29 dBc
PL(PEP) peak envelope power     6   W
RLin input return loss VDS = 26 V; IDq = 90 mA; PL(PEP) = 6 W   -7 -3 dB

6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

Features and benefits

  • Excellent back-off linearity
  • Easy power control
  • Excellent ruggedness
  • High power gain
  • Excellent thermal stability
  • Designed for broadband operation (HF to 2200 MHz)
  • No internal matching for broadband operation
  • ESD protection

Applications

  • RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations
  • Multicarrier applications in the HF to 2200 MHz frequency range
  • Broadcast drivers

 

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