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0.15 lbs
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Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range   470   860 MHz
PL(1dB) nominal output power at 1 dB gain compression     150   W
Test signal: CW
PL output power     150   W
Gp power gain VDS = 32 V; PL = 150 W 13.5 14   dB
ηD drain efficiency VDS = 32 V; f = 860 Hz; IDq = 1000 mA; PL = 150 W 50 60   %

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Designed to withstand abrupt load mismatch errors
  • Source on underside eliminates DC isolators; reducing common mode inductance
  • Designed for broadband operation (UHF band)
  • Internal input and output matching



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